Document
P1203BD
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 48A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
48 30 144
Avalanche Current
IAS 28
Avalanche Energy
L = 0.1mH
EAS
40
Power Dissipation
TC = 25 °C TC = 100 °C
PD
44 17
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 2.8 °C / W
Ver 1.1
1 2014/5/26
P1203BD
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID =.