P1504EIS

P1504EIS P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -38A TO-251(S) 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -38 -24 -150 Avalanche Current IAS -44 Avalanche Energy L = 0.1mH EAS 96.8 Power Dissipation TC = 25 °C TC = 100 °C PD 34 14 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 75 3.6 UNITS °C / W REV 1.0 1 2014/8/18 P1504EIS P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS ...