PKC50DY

PKC50DY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 1.65mΩ @VGS = 10V 30V 9.5mΩ @VGS = 10V ID CH. 120A Q2 37A Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage Q2 VDS Q1 30 30 Gate-Source Voltage Q2 VGS Q1 ±20 ±20 Continuous Drain Current3 TC = 25 °C TC = 100 °C Q2 Q1 ID Q2 Q1 120 37 76 23 Pulsed Drain Current1 Q2 IDM Q1 200 70 Continuous Drain Current TA = 25 °C TA = 70 °C Q2 Q1 ID Q2 Q1 27 10 22 8.1 Avalanche Current Q2 IAS Q1 62 22 Avalanche Energy L = 0.1mH Q2 EAS Q1 192 24 Power Dissipation TC = 25 °C TC = 100 °C Q2 Q1 PD Q2 Q1 48 25 19 10 REV 1.0 1 UNITS V A mJ W 2017/1/3 PKC50DY Dual N-Channel Enhancement Mode MOSFET Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG Q2 2.5 Q1 1.8 Q2 1.6 Q1 1.2 -55 to 150 W °C THERMAL RESISTANCE RATINGS THERMAL RESI...