PK676BA

PK676BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 2.2mΩ @VGS = 10V ID 111A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 111 70 150 Continuous Drain Current TA = 25 °C TA= 70 °C ID 24 19 Avalanche Current IAS 69 Avalanche Energy L =0.1mH EAS 238 Power Dissipation TC = 25 °C TC = 100 °C PD 54 21 Power Dissipation TA = 25 °C TA = 70 °C PD 2.6 1.7 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 47 Junction-to-Case RqJC 2.3 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in...