MOSFET
PK636BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 8mΩ @VGS = 10V
ID 46A
PDFN 5X6P
AB...
Description
PK636BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 8mΩ @VGS = 10V
ID 46A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
46 29 120
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
12 9.7
Avalanche Current
IAS 20
Avalanche Energy
L =0.1mH
EAS
20
Power Dissipation
TC = 25 °C TC = 100 °C
PD
30 12
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.1 1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
59
Junction-to-Case
RqJC
4.1
1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a s...
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