PK552DX

PK552DX Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 5.7mΩ @VGS = 4.5V ID 56A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C 56 ID 36 IDM 70 Continuous Drain Current TA = 25 °C TA = 70 °C 17 ID 14 Avalanche Current IAS 40 Avalanche Energy L = 0.1mH EAS 79 Power Dissipation TC = 25 °C TC = 100 °C 31 PD 12.5 Power Dissipation TA = 25 °C TA = 70 °C 2.9 PD 1.8 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RqJC 4 Junction-to-Ambient2 RqJA 43 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a sti...