PK516BA

PK516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7mΩ @VGS = 10V ID 51A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C 51 ID 32 IDM 120 Continuous Drain Current TA = 25 °C TA = 70 °C 14 ID 11 Avalanche Current IAS 27 Avalanche Energy L = 0.1mH EAS 36 Power Dissipation TC = 25 °C TC = 100 °C 31 PD 12 Power Dissipation TA = 25 °C TA = 70 °C 2.4 PD 1.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RqJC 4 Junction-to-Ambient2 RqJA 51 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air e...