P1203BKA

P1203BKA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 11.8mΩ @VGS = 10V ID 39A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 39 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 24 11 Pulsed Drain Current1 TA = 70 °C IDM 8 110 Avalanche Current IAS 24 Avalanche Energy L = 0.1mH EAS 30 TC = 25 °C 31 Power Dissipation TC = 100 °C TA = 25 °C PD 12 2.5 TA = 70 °C 1.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C Ver 1.0 1 2012/10/10 P1203BKA N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case Junction-to-Ambient2 RqJC RqJA 4 °C / W 50 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 b...