P0903BK

P0903BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 TC = 25 °C (Package Limited) TC = 25 °C(Silicon Limited) ID 30 65 Pulsed Drain Current1 TC = 100 °C 41 IDM 150 Continuous Drain Current2 TA = 25 °C TA = 70 °C 13 ID 10 Avalanche Current IAS 35 Avalanche Energy L = 0.1mH EAS 60 Power Dissipation TC = 25 °C TC = 100 °C 62.5 PD 25 Power Dissipation TA = 25 °C TA = 70 °C 2.5 PD 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed Ver 1.0 1 SYMBOL RqJC RqJA TYPICAL MAXIMUM 2 50 ...