P0303BKA

P0303BKA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.5mΩ @VGS = 10V ID 89A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 89 56 180 Continuous Drain Current TA = 25 °C TA = 70 °C ID 19 12 Avalanche Current IAS 59 Avalanche Energy L = 0.1mH EAS 174 TC = 25 °C 48 Power Dissipation TC = 100 °C TA = 25 °C PD 19 2.1 TA = 70 °C 1.4 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C Ver 1.0 1 2012/5/16 P0303BKA N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case Junction-to-Ambient2 Steady-State Steady-State RqJC RqJA 2.6 °C / W 57 1Pulse width limited by maximum junction temperature. 2The value of ...