PE6B0SA

PE6B0SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5mΩ @VGS = 10V ID 42A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 42 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 26 16 Pulsed Drain Current1 TA= 70 °C IDM 13 80 Avalanche Current IAS 25 Avalanche Energy L =0.1mH EAS 31 TC = 25 °C 17.8 Power Dissipation4 TC = 100 °C TA = 25 °C PD 7 2.7 TA = 70 °C 1.7 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 t≦10s Steady-State RqJA RqJA 45 65 Junction-to-Case Steady-State RqJC 7 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air...