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PE632BA
MOSFET
Description
PE632BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.5mΩ @VGS = 10V ID 53A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 53 Continuous Drain Current2 Tc = 100 °C TA = 25 °C ID 33 ...
UNIKC
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PE632BA
MOSFET
- UNIKC
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