MOSFET
PE5E4BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.5mΩ @VGS = 10V
ID 31A
PDFN 3X3P
...
Description
PE5E4BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.5mΩ @VGS = 10V
ID 31A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±25
Continuous Drain Current3 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
31 19 90
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
10 8
Avalanche Current
IAS 22
Avalanche Energy
L =0.1mH
EAS
24
TC = 25 °C
18
Power Dissipation
TC = 100 °C TA = 25 °C
PD
7 1.7
TA = 70 °C
1.1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Steady-State
RqJA
70
Junction-to-Case
Steady-State
RqJC
7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a s...
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