PE552BA

PE552BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 5mΩ @VGS = 4.5V ID3 47A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Tc = 25 °C 47 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 30 15 Pulsed Drain Current1 TA = 70 °C IDM 12 70 Avalanche Current IAS 38.6 Avalanche Energy L =0.1mH EAS 74.6 TC = 25 °C 19 Power Dissipation TC = 100 °C TA = 25 °C PD 7 2 TA = 70 °C 1.3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 60 Junction-to-Case RqJC 6.5 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limi...