PE537BA

PE537BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 8.5mΩ @VGS = -10V ID -33A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 TC = 25 °C -33 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID -22 -12 Pulsed Drain Current1 TA= 70 °C IDM -9.6 -100 Avalanche Current IAS -34 Avalanche Energy L =0.1mH EAS 57.8 TC = 25 °C 16.7 Power Dissipation TC = 100 °C TA = 25 °C PD 6.7 2 TA = 70 °C 1.3 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 60 Junction-to-Case RqJC 7.5 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25...