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PE532DX

MOSFET

Description

PE532DX Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 19mΩ @VGS = 10V ID3 21A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC= 25 °C 21 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID ...

UNIKC

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