MOSFET
PE504BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10mΩ @VGS = 10V
ID 31A
PDFN 3X3P
A...
Description
PE504BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10mΩ @VGS = 10V
ID 31A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
Tc = 25 °C Tc = 100 °C TA = 25 °C TA= 70 °C
ID
IDM IAS
31 20 12 9 70 26
Avalanche Energy
EAS 33
TC = 25 °C
Power Dissipation
TC = 100 °C TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, Tstg
17 7 2.3 1.5 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
7.5
Junction-to-Ambient2
RqJA
55
1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
UNITS °C / W
REV 1.0
1 2014-3-3
PE504BA
N-Channel Enhancement Mode...
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