PE642DT

PE642DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 9mΩ @VGS = 10V Q1 30V 10.5mΩ @VGS = 10V ID 34A 31A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 34 31 22 20 IDM 48 46 Continuous Drain Current3 TA = 25 °C TA = 70 °C ID 11 9.7 8.8 7.7 Avalanche Current IAS 21 18.3 Avalanche Energy L = 0.1mH EAS 22 16.7 Power Dissipation TC = 25 °C TC = 100 °C PD 20 19 8 7.6 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.7 1.2 1.1 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RqJA RqJA Q2 Q1 62 70 Junction-to-case RqJC RqJC Q2 Q1 6.2 6.5 1Pulse width limited by maximum...