PE606DT

PE606DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 11mΩ @VGS = 10V Q1 30V 16mΩ @VGS = 10V ID 30A 23A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 30 17 40 Continuous Drain Current TA = 25 °C TA = 70 °C ID 9.4 7.5 Avalanche Current IAS 17 Avalanche Energy L = 0.1mH EAS 14 Power Dissipation TC = 25 °C TC = 100 °C PD 19 7.6 Power Dissipation TA = 25 °C TA = 70 °C PD 1.8 1.1 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 Q1 30 ±20 23 14 32 7.3 5.8 12 7 16 6 1.6 1 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA RqJA Q2 Q1 67 77 Junction-to-case RqJC RqJC Q2 Q1 6.5 7.5 1Pulse width limited by maximum junction te...