Document
P5806NVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 60V
RDS(ON) 65mΩ @VGS = 10V
-60V
120mΩ @VGS = -10V
ID 4.5A -3.5A
Channel N P
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 60 VDS P -60
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70 °C
N 4.5 P -3.5 ID N 3.5 P -2.7
Pulsed Drain Current1
N 20 IDM P -20
Avalanche Current
N 18.3 IAS P -18.3
Avalanche Energy
L=0.1mH
N 16.9 EAS P 16.9
Power Dissipation
TA = 25 °C TA = 70 °C
N2 P2 PD N 1.3 P 1.3
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ
W °C
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 60 °C / W
Ver 1.0
1 2012/12/5
P5806NVG
N&P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
.