P-Channel MOSFET
P3304EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
33mΩ @VGS = -10V
ID -7A
SOP- 08
...
Description
P3304EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
33mΩ @VGS = -10V
ID -7A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-7 -6 -30
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.5 1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle 1%
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 50 °C / W
Ver 1.0
1 2012/4/13
P3304EV
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) I...
Similar Datasheet