P2202CV

P2202CV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 22mΩ @VGS = 4.5V ID 8A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current2 Pulsed Drain Current1,2 TA = 25 °C TA = 70 °C ID IDM 8 6 80 Avalanche Current IAS 20 Avalanche Energy L = 0.1mH EAS 21 Power Dissipation TA= 25 °C TA =70 °C PD 2.5 1.6 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RqJA 50 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.The value in any given application depends on the user's specific board des...