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P1004HV Dataheets PDF



Part Number P1004HV
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P1004HV DatasheetP1004HV Datasheet (PDF)

P1004HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 13mΩ @VGS = 10V ID 10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±24 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 10 8 40 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS 38 71 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.28 Operating J.

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P1004HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 13mΩ @VGS = 10V ID 10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±24 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 10 8 40 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS 38 71 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.28 Operating Junction & Storage Temperature Range Lead Temperature( 1/16" from case for 10 sec) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Lead 1Pulse width limited by maximum junction temperature. 2VDD = 20V, Starting TJ = 25°C. SYMBOL RqJA RqJL TYPICAL MAXIMUM 62.5 25 UNITS °C / W Ver 1.0 1 2012/4/16 P1004HV N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) .


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