P2502IZG

P2502IZG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 22mΩ @VGS = 4.5V ID 6.3A TSSOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current2 Pulsed Drain Current1 TA= 25 °C TA = 70 °C ID IDM 6.3 5 50 Avalanche Current IAS 22 Avalanche Energy L = 0.1mH EAS 23 Power Dissipation TA = 25 °C TA= 70 °C PD 1.4 0.9 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RqJA 90 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2014-2-17 P2502IZG Dual N-Channel Enhanceme...