P2804NVG

P2804NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28mΩ @VGS = 10V -40V 65mΩ @VGS = -10V ID Channel 7A N -6A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 40 VDS P -40 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70 °C N7 P -6 ID N 6 P -5 Pulsed Drain Current1 N 20 IDM P -20 Power Dissipation TA = 25 °C TA = 70 °C N 2 P PD N 1.3 P Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) TJ, Tstg TL -55 to 150 275 UNITS V A W °C REV 1.1 1 2014-4-14 P2804NVG N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle  1%. SYMBOL RqJA TYPICAL 48 MAXIMUM UNITS 62.5 °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL ...