P2503NVG

P2503NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 25mΩ @VGS =10V -30V 45mΩ @VGS = -10V ID Channel 7A N -5A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current2 TA = 25 °C TA = 70°C N7 P -5 ID N 5 P -4 Pulsed Drain Current1 N 30 IDM P -30 Avalanche Current N 20 IAS P -20 Avalanche Energy L = 0.1mH N 20 EAS P 20 Power Dissipation TA = 25 °C TA = 70 °C N2 P 1.7 PD N 1.3 P1 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C REV 1.0 1 2014/9/19 P2503NVG N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Device TYPICAL MAXIMUM UNITS Junction-to-Ambient3 RqJA N-ch P-ch 63 °C / W 70 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3The valu...