P2003NV

P2003NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 20mΩ @VGS =10V -30V 25mΩ @VGS = -10V ID 8.8A -8A Channel N P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70°C N 8.8 P -8 ID N 7 P -6.4 Pulsed Drain Current1 N 35 IDM P -32 Avalanche Current N 27 IAS P -28 Avalanche Energy L = 0.1mH N 38 EAS P 39 Power Dissipation TA = 25 °C TA = 70 °C N 2.5 P PD N 1.6 P Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C REV 1.0 1 2014-5-12 P2003NV N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 50 °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER S...