P06P03LCG

P06P03LCG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 45mΩ @VGS = -10V ID -3.5A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.5 -2.8 -20 Avalanche Current IAS -19 Avalanche Energy L = 0.1mH EAS 18 Power Dissipation TA = 25 °C TA = 70 °C PD 0.78 0.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle  1%. SYMBOL RqJC RqJA TYPICAL MAXIMUM 18 160 UNITS °C / W Ver 1.0 1 2012/4/12 P06P03LCG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN T...