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P6503FM6 Dataheets PDF



Part Number P6503FM6
Manufacturers UNIKC
Logo UNIKC
Description P-Channel MOSFET
Datasheet P6503FM6 DatasheetP6503FM6 Datasheet (PDF)

P6503FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 65mΩ @VGS = -4.5V ID -3.6A SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.6 -3 -19 Avalanche Current IAS -19 Avalanche Energy L=0.1mH EAS 18 Power Dissipation TA = 25 °C TA = 70 °C PD 1 0.5 .

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P6503FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 65mΩ @VGS = -4.5V ID -3.6A SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.6 -3 -19 Avalanche Current IAS -19 Avalanche Energy L=0.1mH EAS 18 Power Dissipation TA = 25 °C TA = 70 °C PD 1 0.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1pusle width Limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 130 °C / W Ver 1.0 1 2012/6/25 P6503FM6 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate .


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