PM550BA

PM550BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 3Ω @VGS = 10V ID 0.4A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ±20 Continuous Drain Current TA = 25 °C TA = 70 °C ID 0.4 0.3 Pulsed Drain Current1 IDM 1.6 Power Dissipation TA = 25 °C TA = 70 °C PD 0.75 0.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 166 °C / W REV 1.0 1 2014/8/29 PM550BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS Gate Threshold Voltage VGS(th) VGS = 0V, ID = 250mA VDS = ...