P2B60AMA

P2B60AMA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 200Ω @VGS = 10V ID 40mA SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 40 31 120 Power Dissipation TA = 25 °C TA = 70 °C PD 0.7 0.4 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V mA W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 178 °C / W REV 1.0 1 2015/4/29 P2B60AMA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 25...