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PF610BC Dataheets PDF



Part Number PF610BC
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet PF610BC DatasheetPF610BC Datasheet (PDF)

PF610BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.7Ω @VGS = 10V ID 1.1A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 1.1 0.9 5 Avalanche Current IAS 3.8 Avalanche Energy L =1mH EAS 7.2 Power Dissipation TA = 25 °C TA = 70 °C PD 1.9 1.2 Junctio.

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PF610BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.7Ω @VGS = 10V ID 1.1A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 1.1 0.9 5 Avalanche Current IAS 3.8 Avalanche Energy L =1mH EAS 7.2 Power Dissipation TA = 25 °C TA = 70 °C PD 1.9 1.2 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 65 12 UNITS °C / W Ver 1.0 1 2013-11-6 PF610BC N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown.


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