P0425AI

P0425AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 0.8Ω @VGS = 10V ID 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 4 3 16 Avalanche Current IAS 4 Avalanche Energy L = 7.7mH EAS 60 Power Dissipation TC = 25 °C TC = 100 °C PD 69 27 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.8 50 UNITS °C / W Ver 1.0 1 2012/4/16 P0425AI N-Channel Enhancement Mode MOSFET PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 250 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 25...