P0465CI

P0465CI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.6Ω @VGS = 10V ID 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1，2 Avalanche Current3 TC= 25 °C TC= 100 °C ID IDM IAS 4 2.5 15 2 Avalanche Energy3 EAS 20 Power Dissipation TC= 25 °C TC= 100°C PD 54 21 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting TJ = 25˚C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.3 62.5 UNITS °C / W REV 1.0 1 2014-3-20 P0465CI N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PA...