P0420AD

P0420AI / P0420AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 0.7Ω @VGS = 10V ID 4A TO-251 TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 , 2 Avalanche Current Avalanche Energy Power Dissipation TC = 25 °C TC = 100 °C L = 10mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD 200 ±20 4 3 16 4 75 69 27 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited by package. SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.8 °C / W Ver 1.1 1 2013-3-13 P0420AI / P0420AD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC Drain-Source Breakdown...