P1820BD

P1820BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 160mΩ @VGS = 10V ID 18A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 18 11.4 30 Avalanche Current IAS 18 Avalanche Energy L = 1mH EAS 162 Power Dissipation TC= 25 °C TC= 100°C PD 104 41 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.5 1.2 UNITS °C / W REV 1.0 1 2014-3-27 P1820BD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown...