CJU80N03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU80N03 V(BR)DSS 30V N-Channel Power MOSFET RDS(on)MAX 6.5mΩ@10V 10mΩ@ 5V     ID 80A TO-252-2L DESCRIPTION The CJU80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES 1. GATE 2. DRAIN 3. SOURCE z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Excellent package for good heat dissipation z Special process technology for high ESD capability z Good stability and uniformity with high EAS APPLICATIONS z Power switching application z Uninterruptible Power Supply z Hard switched and high frequency circuits MARKING EQUIVALENT CIRCUIT CJU80N03= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Drain-Source Voltage Parameter Gate...