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THN6701B

AUK

SiGe NPN Transistor


Description
Semiconductor □ Applications - VHF and UHF power amplifier □ Features - High power gain GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz - High power POUT = 35 dBm(3W) at VCE = 6 V, ICQ = 50 mA, f = 465 MHz THN6701B SiGe NPN Transistor SOT-223 Unit in mm 6.5 3.0 4 3.5 7.0 12 2.3 0.7 4.6 3 Pin Configuration 1. Base 2. Emitter 3. Collector 4. Emitter ...



AUK

THN6701B

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