N-Channel MOSFET
P0470ATF / P0470ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
2.8Ω @VGS = 10V
ID 4A...
Description
P0470ATF / P0470ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
2.8Ω @VGS = 10V
ID 4A
TO-220F TO-220FS
100% UIS Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 700
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
IDM EAS
4 1.2 16 20
Power Dissipation
TC = 25 °C TC = 100 °C
PD
27 10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD=50V,L=10mH,starting TJ=25°C
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM
4.62 62.5
UNITS °C / W
Ver 1.0
1 2012/8/29
P0470ATF / P0470ATFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Othe...
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