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P0270ATF Dataheets PDF



Part Number P0270ATF
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0270ATF DatasheetP0270ATF Datasheet (PDF)

P0270ATF / P0270ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 6.3Ω @VGS = 10V ID 2A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM EAS 2 1 8 5 Power Dissipation TC = 25 °C TC = 100 °C PD 26 10 Operating Junction & Storage Temperature Range TJ, TSTG .

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P0270ATF / P0270ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 6.3Ω @VGS = 10V ID 2A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM EAS 2 1 8 5 Power Dissipation TC = 25 °C TC = 100 °C PD 26 10 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V, L = 10mH, starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 4.7 62.5 UNITS °C / W REV 1.0 1 2014/10/14 P0270ATF / P0270ATFS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDIT.


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