P0765GTFS

P0765GTF / P0765GTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 1.5Ω @VGS = 10V ID 7A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 7 4 13 5.7 163 Power Dissipation TC = 25 °C TC = 100 °C PD 46 18 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V ,L=10mH, starting TJ = 25°C. RqJC RqJA TYPICAL MAXIMUM 2.7 62.5 UNITS °C / W Ver 1.0 1 2012/8/6 P0765GTF / P0765GTFS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTER...