P0465ATF

P0465ATF / P0465ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.5Ω @VGS = 10V ID 4A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM EAS 4 2.2 16 23.8 Power Dissipation TC = 25 °C TC = 100 °C PD 25 10 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD=50V,L=10mH,starting TJ=25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 5 62.5 UNITS °C / W Ver 1.0 1 2012/8/3 P0465ATF / P0465ATFS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PAR...