P1060ATFS

P1060ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.75Ω @VGS = 10V ID 10A 100% UIS tested TO-220F(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC= 25 °C TC= 100 °C ID IDM IAS 10 6.2 31 8.9 Avalanche Energy3 EAS 396 Power Dissipation TC= 25 °C TC= 100°C PD 40 16 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 Mounting Torque4 Machine Screw 4.3 0.5 UNITS V A mJ W °C lbf.in N.m THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting ,TJ = 25˚C. 4Not suggest using Self-Tapping screw. SYMBOL RqJC RqJA TYPICAL MAXIMUM 3.1 62.5 UNITS °C / W REV 1.0 1 201...