RQ6E085BN

RQ6E085BN 　　Nch 30V 8.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 14.4mΩ ±8.5A 1.25W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT6). 3) Pb-free lead plating ; RoHS compliant lOutline SOT-457T SC-95 TSMT6 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Quantity (pcs) 8 3000 Taping code TCR Marking AB lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID*1 IDP*2 VGSS IAS*3 EAS*3 PD*4 PD*5 Tj Tstg 30 ±8.5 ±18 ±20 8.5 25.8 1.25 0.95 150 -55 to +150 V A A V A mJ W W ℃ ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.001 　 　 RQ6E085BN 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - ambient 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJA*4 RthJA*5 Values Min. Typ. Max. - - 100 - - 132 Unit ℃/W ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient 　Δ...