Power MOSFET
RF6C055BC
Pch -20V -5.5A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-20V 25.8mΩ ±5.5A
1.0W
lFeatures
1) Low on - ...
Description
RF6C055BC
Pch -20V -5.5A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-20V 25.8mΩ ±5.5A
1.0W
lFeatures
1) Low on - resistance. 2) High Power small mold Package (TUMT6). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free.
lOutline
SOT-363T
TUMT6
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
180
lApplication Switching
Type Tape width (mm) Quantity (pcs)
8 3000
Load switch
Taping code
TCR
Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
CD
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Continuous drain current
ID*1 ±5.5 A
Pulsed drain current
IDP*2 ±18 A
Gate - Source voltage
VGSS
±8 V
Power dissipation
PD*3 1.0 W PD*4 0.91 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.003
RF6C055BC
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Datasheet
Symbol
RthJA*3 RthJA*4
Values Min. Typ. Max.
- - 125 - - 137
Unit
℃/W ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage temperature coefficient
...
Similar Datasheet