Document
R8005ANJ
Nch 800V 5A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
800V 2.1Ω ±5A 120W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant
lOutline
TO-263 SC-83 LPT(S)
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching Power Supply
Type Tape width (mm) Quantity (pcs)
24 1000
Taping code
TL
Marking
R8005ANJ
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
800
V
Continuous drain current (Tc = 25°C)
ID*1
±5
A
Pulsed drain current
IDP*2
±10
A
Gate - Source voltage
VGSS
±30
V
Avalanche current, single pulse
IAS*3
2.5
A
Avalanche energy, single pulse
EAS*3
1.66
mJ
Power dissipation (Tc = 25°C)
PD
120
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.002
R8005ANJ
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
-
- 1.04 ℃/W
-
- 80 ℃/W
-
- 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
Zero gate voltage drain current
Gate - Source leakage current Gate threshold voltage
Static drain - source on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 800V, VGS = 0V IDSS Tj = 25°C
Tj = 125°C IGSS VGS = ±30V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 2.5A RDS(on)*4 Tj = 25°C
Tj = 125°C RG f = 1MHz, open drain
Values Unit
Min. Typ. Max.
800 -
-
V
-
- 100 μA
-
-
-
-
- ±100 nA
3.0 - 5.0 V
- 1.6 2.1 Ω
- 3.8 -
- 7.6 - Ω
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20190527 - Rev.002
R8005ANJ
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Forward Transfer Admittance
|Yfs|*4 VDS = 10V, ID = 2.5A
1.0 -
-
S
Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time
Ciss VGS = 0V
- 500 -
Coss VDS = 25V
- 250 - pF
Crss f = 1MHz
- 25 -
td(on)*4 VDD ⋍ 400V, VGS = 10V
-
25
-
tr*4 td(off)*4
ID = 2.5A RL ⋍ 162Ω
- 30 ns
- 50 -
tf*4 RG = 10Ω
- 27 -
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage
Qg*4 Qgs*4 Qgd*4 V(plateau)
VDD ⋍ 400V ID = 5A VGS = 10V VDD ⋍ 400V, ID = 5A
*1 Limited only by maximum temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L⋍500μH, VDD=50V, RG=25Ω, starting Tj=25°C *4 Pulsed
Values Unit
Min. Typ. Max.
- 20 -
-
5
- nC
- 11 -
- 7.4 -
V
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© 2019 ROHM Co., Ltd. All rights reserved.
3/11
20190527 - Rev.002
R8005ANJ
Datasheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Continuous forward current
Pulse forward current
IS*1 TC = 25℃
ISP*2
-
-
5
A
-
-
10
A
Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current
VSD*4 trr*4 Qrr*4 Irrm*4
VGS = 0V, IS = 5A
IS = 5A, VGS = 0V di/dt = 100A/μs
-
-
1.5
V
- 330 -
ns
- 2.64 -
μC
-
16
-
A
lTypical transient thermal characteristics
Symbol
Value
Unit
Rth1
0.771
Rth2
7.231
K/W
Rth3
66.01
Symbol Cth1 Cth2 Cth3
Value 0.003718
0.3051 0.8206
Unit
Ws/K
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© 2019 ROHM Co., Ltd. All rights reserved.
4/11
20190527 - Rev.002
R8005ANJ
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operati.