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R8005ANJ Dataheets PDF



Part Number R8005ANJ
Manufacturers ROHM
Logo ROHM
Description Power MOSFET
Datasheet R8005ANJ DatasheetR8005ANJ Datasheet (PDF)

R8005ANJ   Nch 800V 5A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 2.1Ω ±5A 120W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lOutline TO-263 SC-83 LPT(S)          lInner circuit    Datasheet   lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TL Marking R8005ANJ lAbsolute maximum ratings (Ta = 25°C ,.

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R8005ANJ   Nch 800V 5A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 2.1Ω ±5A 120W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lOutline TO-263 SC-83 LPT(S)          lInner circuit    Datasheet   lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TL Marking R8005ANJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 800 V Continuous drain current (Tc = 25°C) ID*1 ±5 A Pulsed drain current IDP*2 ±10 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 2.5 A Avalanche energy, single pulse EAS*3 1.66 mJ Power dissipation (Tc = 25°C) PD 120 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃                                                                                          www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002     R8005ANJ            lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s                 Datasheet                      Symbol RthJC RthJA Tsold Values Unit Min. Typ. Max. - - 1.04 ℃/W - - 80 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance V(BR)DSS VGS = 0V, ID = 1mA VDS = 800V, VGS = 0V IDSS Tj = 25°C Tj = 125°C IGSS VGS = ±30V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA VGS = 10V, ID = 2.5A RDS(on)*4 Tj = 25°C Tj = 125°C RG f = 1MHz, open drain Values Unit Min. Typ. Max. 800 - - V       - - 100 μA - - - - - ±100 nA 3.0 - 5.0 V       - 1.6 2.1 Ω - 3.8 - - 7.6 - Ω                                                                                           www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.002 R8005ANJ                            Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Forward Transfer Admittance |Yfs|*4 VDS = 10V, ID = 2.5A 1.0 - - S Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Ciss VGS = 0V - 500 - Coss VDS = 25V - 250 - pF Crss f = 1MHz - 25 - td(on)*4 VDD ⋍ 400V, VGS = 10V - 25 - tr*4 td(off)*4 ID = 2.5A RL ⋍ 162Ω - 30 ns - 50 - tf*4 RG = 10Ω - 27 - lGate charge characteristics (Ta = 25°C) Parameter Symbol Conditions Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage Qg*4 Qgs*4 Qgd*4 V(plateau) VDD ⋍ 400V ID = 5A VGS = 10V VDD ⋍ 400V, ID = 5A *1 Limited only by maximum temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L⋍500μH, VDD=50V, RG=25Ω, starting Tj=25°C *4 Pulsed Values Unit Min. Typ. Max. - 20 - - 5 - nC - 11 - - 7.4 - V                                                                                           www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3/11 20190527 - Rev.002 R8005ANJ                 Datasheet lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Continuous forward current Pulse forward current IS*1 TC = 25℃ ISP*2 - - 5 A - - 10 A Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current VSD*4 trr*4 Qrr*4 Irrm*4 VGS = 0V, IS = 5A IS = 5A, VGS = 0V di/dt = 100A/μs - - 1.5 V - 330 - ns - 2.64 - μC - 16 - A lTypical transient thermal characteristics Symbol Value Unit Rth1 0.771 Rth2 7.231 K/W Rth3 66.01 Symbol Cth1 Cth2 Cth3 Value 0.003718 0.3051 0.8206       Unit Ws/K                                                                                            www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 4/11 20190527 - Rev.002 R8005ANJ        lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve          Datasheet Fig.2 Maximum Safe Operati.


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