MOSFET
NotNeRewcDoemsimgennsded for
R6008FNJ
Nch 600V 8A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
600V 0.95
8A 119...
Description
NotNeRewcDoemsimgennsded for
R6008FNJ
Nch 600V 8A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
600V 0.95
8A 119W
Outline
LPTS (SC-83)
(1) (3)
(2)
Features 1) Low on-resistance.
Inner circuit
(2)
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple.
(1)
(1) Gate (2) Drain *1 (3) Source
*1 Body Diode
5) Parallel use is easy.
(3)
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packaging
Taping
Reel size (mm)
330
Application Switching Power Supply
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
24 1,000
TL
Marking
R6008FNJ
Absolute maximum ratings(Ta = 25°C) Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt
Tc = 25°C Tc = 100°C
VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5
600 8 3.9 32 30 4.3 3.4 4 119 150 55 to 150 15
V A A A V mJ mJ A W °C °C V/ns
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1/13
2016.02 - Rev.C
NotNeRewcDoemsimgennsded for
R6008FNJ Absolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V, ID = 8A Tj = 125°C
Values Unit 50 V/ns
Thermal resistance Parameter
Thermal resistance, jun...
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