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R6008FNJ

ROHM

MOSFET

NotNeRewcDoemsimgennsded for R6008FNJ Nch 600V 8A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 600V 0.95 8A 119...


ROHM

R6008FNJ

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NotNeRewcDoemsimgennsded for R6008FNJ Nch 600V 8A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 600V 0.95 8A 119W Outline LPTS (SC-83) (1) (3) (2) Features 1) Low on-resistance. Inner circuit (2) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) (1) Gate (2) Drain *1 (3) Source *1 Body Diode 5) Parallel use is easy. (3) 6) Pb-free lead plating ; RoHS compliant Packaging specifications Packaging Taping Reel size (mm) 330 Application Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code 24 1,000 TL Marking R6008FNJ Absolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 600 8 3.9 32 30 4.3 3.4 4 119 150 55 to 150 15 V A A A V mJ mJ A W °C °C V/ns www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/13 2016.02 - Rev.C NotNeRewcDoemsimgennsded for R6008FNJ Absolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 480V, ID = 8A Tj = 125°C Values Unit 50 V/ns Thermal resistance Parameter Thermal resistance, jun...




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