MOSFET
QH8JA1
-20V Pch +Pch Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-20V 38mΩ ±5.0A 1.5W
lFeatures
1) Low on - resist...
Description
QH8JA1
-20V Pch +Pch Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-20V 38mΩ ±5.0A 1.5W
lFeatures
1) Low on - resistance. 2) Small surface mount package(TSMT8) 3) -1.8V Drive. 4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Reel size (mm) Type Tape width (mm)
Quantity (pcs) Taping code Marking
Embossed Tape 180 8 3000 TCR JA1
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Continuous drain current
ID*1 ±5.0 A
Pulsed drain current
IDP*2 ±18 A
Gate - Source voltage
VGSS
±10 V
Avalanche current, single pulse
IAS*3 -5.0 A
Avalanche energy, single pulse
EAS*3
8.9 mJ
Power dissipation (total)
PD*4 1.5 W
PD*5 1.1
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20190527 - Rev.002
QH8JA1
lThermal resistance
Parameter
Thermal resistance, junction - ambient (total)
Datasheet
Symbol
RthJA*4 RthJA*4
Values Min. Typ. Max.
- - 83.3 - - 100
Unit ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter...
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