UPA2724UT1A

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2724UT1A SWITCHING N-CHANNEL POWER MOSFET 1.27OM 0.10CHIPSET-ICM DESCRIPTION PACKAGE DRAWING (Unit: mm) The μ PA2724UT1A is N-channel MOSFET designed for DC/DC converter applications. +0.1 C −0.05 FEATURES Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ MAX. (VGS = 4.5 V, ID = 15 A) Low input capacitance Ciss = 4400 pF TYP. (VDS = 15 V, VGS = 0 V) Thin type surface mount package with heat spreader (8-pin HVSON) RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW =10 sec) Note2 ID(DC) ID(pulse) PT1 PT2 ±29 ±170 1.5 4.6 A A W W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Not...