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SMK0260IS
Advanced N-Ch Power MOSFET
Description
SMK0260IS Advanced N-Ch Power MOSFET SWITCHING
REGULATOR
APPLICATION Features Drain-Source breakdown voltage: BVDSS=600V (Min.) Low gate charge: Qg=7nC (Typ.) Low drain-source On resistance: RDS(on)=3.9Ω (Typ.) 100% avalanche tested RoHS compliant device Ordering Information Part Number SMK0260IS Marking SMK0260 Package I-PAK (Short Lead) GD...
KODENSHI KOREA
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